ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,638, issued on Feb. 17, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).
"Semiconductor device" was invented by Ting-Feng Liao (Hsin-chu, Taiwan), Mao-Yuan Weng (Hualien, Taiwan) and Kuang-Wen Liu (Hsin-chu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The semiconductor device includes a substrate, a stack disposed on the substrate, a first common source line and a second common source line disposed in the stack and connected to the substrate. The stack includes insulating layers and conductive layers alternately arranged. The first common source line and the second common source line are extended along a first direction a...