US Patent Issued to MACRONIX INTERNATIONAL on Dec. 23 for "Semiconductor structure and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,065, issued on Dec. 23, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Semiconductor structure and method for manufacturing the same" was invented by Chih-Chieh Cheng (Zhubei, Taiwan) and Wen-Jer Tsai (Hualien, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. The semiconductor structure includes a first substrate, a device layer, a first dielectric layer, a second dielectric layer, a second substrate, and a circuit layer. The device layer is disposed on the first substrate. The first dielectric layer is disposed on the device layer. The second dielectric layer is disposed on the first ...