ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,710,874, issued on Aug. 18, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).
"Memory device and operation method thereof" was invented by Shih-Chang Huang (Magong City, Taiwan), Han-Sung Chen (Hsinchu City, Taiwan) and Chin-Hung Mi (New Taipei City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An operation method for a memory device comprises: starts a first operation cycle after receiving a first operation command, the first operation cycle including a voltage set period, a first operation set period, a first operation executing period and a first operation recovery period; when a second operation command is received by the m...