US Patent Issued to MACRONIX International on April 21 for "Memory device and read voltage setting method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,174, issued on April 21, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"Memory device and read voltage setting method thereof" was invented by Shuo-Nan Hung (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and read voltage setting method are provided. The memory device may be a 3D NAND flash memory circuit, and provides a high-capacity storage medium with favorable performance. The read voltage setting method includes: performing read verify operations on multiple memory cells according to multiple first reading voltage intervals and obtaining multiple first pass memory cells numbers; shift...