ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,169, issued on April 21, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).
"Memory device and data accessing method thereof" was invented by Chun-Hsiung Hung (Hsin-Chu, Taiwan) and Hsin-Yi Ho (Hsinchu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A data accessing method of a memory device includes the following steps. During a first time period, a read voltage is applied to a first read selected word line in a first memory cell block. During a first data reading time period in the first time period, at least one first memory cell string in the first memory cell block is activated. During a second time period, the read...