US Patent Issued to MACRONIX INTERNATIONAL on April 21 for "Complementary metal-oxide-semiconductor (CMOS) voltage reference generator" (Taiwanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,608,032, issued on April 21, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Complementary metal-oxide-semiconductor (CMOS) voltage reference generator" was invented by Hsien-Hung Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A voltage generation circuit for high performance and high capacity three-dimensional (3D) NAND memory that receives an input control current and outputs a VREF is provided. The voltage generation circuit includes a first circuit including first and second transistors connected in series between a first node receiving the input control current and a supply node, a second circuit including f...