US Patent Issued to MACRONIX International on April 14 for "Semiconductor device including a hybrid bonding structure" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,783, issued on April 14, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device including a hybrid bonding structure" was invented by Shao-En Chang (Nantou County, Taiwan), Tzung-Ting Han (Hsinchu City, Taiwan), Meng-Hsuan Weng (Taichung City, Taiwan) and Chen-Yu Cheng (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device for manufacturing a 3D NAND flash memory with high capacity and high performance. The semiconductor device includes: a first device structure layer on a substrate; an interconnect structure layer on the first device structure layer, which includes ...