US Patent Issued to Lumentum Technology UK on Nov. 3 for "High power photodiode" (Canadian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,477, issued on Nov. 3, was assigned to Lumentum Technology UK Ltd. (Northamptonshire, Great Britain).

"High power photodiode" was invented by Jason Ackert (Ottawa), Chengkun Chen (Ottawa) and Marcel G. Boudreau (Ottawa).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some implementations, a photodiode includes a waveguide layer of a first semiconductor material. The photodiode may include a first ion-implantation region, in the first semiconductor material, that is doped to exhibit a first conductivity type. The photodiode may include a mesa, of a second semiconductor material, on the waveguide layer. The first ion-implantation region may be set bac...