ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,485,458, issued on Dec. 2, was assigned to LPE S.p.A. (Milan) and University of Catania (Catania, Italy).

"Method for removing layers of silicon carbide, as well as process and apparatus for cleaning epitaxial reactor components" was invented by Maria Elena Fragala (Milan) and Giovanni Franco (Catania, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "The innovative method is for removing a silicon carbide layer from a bulk piece; the bulk piece comprises a graphite substrate underlying the silicon carbide layer; the method comprises in succession the steps of: a) submerging the bulk piece in a first solution containing nitric acid, b) submerging the ...