US Patent Issued to LOTUS APPLIED TECHNOLOGY on May 12 for "Methods and systems for inhibiting precursor interactions during radical-enhanced atomic layer deposition" (Oregon Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,624,449, issued on May 12, was assigned to LOTUS APPLIED TECHNOLOGY LLC (Hillsboro, Ore.).

"Methods and systems for inhibiting precursor interactions during radical-enhanced atomic layer deposition" was invented by Eric Dickey (Beaverton, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "This disclosure relates to methods and systems for inhibiting precursor interactions during radical-enhanced atomic layer deposition. A substrate may be completely exposed to a precursor gas. Meanwhile, a gaseous radical species is directed through a shroud towards the substrate. The gaseous radical species flows through the shroud under sufficient flow and pressure co...