US Patent Issued to LINTEC on June 2 for "Gas barrier film and method for manufacturing gas barrier film" (Japanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,643,985, issued on June 2, was assigned to LINTEC Corp. (Tokyo).

"Gas barrier film and method for manufacturing gas barrier film" was invented by Nana Shindo (Saitama, Japan) and Satoshi Naganawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a gas barrier film and manufacturing methods for making the gas barrier film. The gas barrier film includes a gas barrier layer containing silicon and oxygen as main components. The gas barrier layer has a region in the thickness direction containing silicon, oxygen, and nitrogen. The region has an element ratio of nitrogen of 5 at % or greater and a thickness of 30 nm or greater."

The patent wa...