US Patent Issued to Lam Research on Nov. 18 for "Plasma enhanced atomic layer deposition of silicon-containing films" (Oregon Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,473,633, issued on Nov. 18, was assigned to Lam Research Corp. (Fremont, Calif.).

"Plasma enhanced atomic layer deposition of silicon-containing films" was invented by Ravi Kumar (Beaverton, Ore.), Pulkit Agarwal (Beaverton, Ore.), Adrien LaVoie (Newberg, Ore.), Dustin Zachary Austin (Tigard, Ore.), Joseph R. Abel (West Linn, Ore.), Douglas Walter Agnew (Portland, Ore.) and Jonathan Grant Baker (King City, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method comprising: providing a substrate in a processing station comprising a substrate support and a showerhead, the substrate comprising a gap to be filled; and depositing silicon-containing film...