ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,492, issued on June 30, was assigned to Lam Research Corp. (Fremont, Calif.).

"Systems and methods for etching a high aspect ratio structure" was invented by Nikhil Dole (Castro Valley, Calif.), Takumi Yanagawa (Fremont, Calif.), Eric A. Hudson (Berkeley, Calif.), Merrett Wong (San Carlos, Calif.) and Aniruddha Joi (Milpitas, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for etching a stack is described. The method includes etching a first nitrogen-containing layer of the stack by applying a non-metal gas and discontinuing the application of the non-metal gas upon determining that a first oxide layer is reached. The first oxide laye...