US Patent Issued to Lam Research on July 14 for "Chamber-accumulation extension via in-situ passivation" (Oregon Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,680,159, issued on July 14, was assigned to Lam Research Corp. (Fremont, Calif.).

"Chamber-accumulation extension via in-situ passivation" was invented by ZhiYuan Fang (West Linn, Ore.), Changhe Guo (Tigard, Ore.), Chengzhu Qi (Tigard, Ore.), Ruoyu Yue (Beaverton, Ore.) and Chunhai Ji (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosed subject matter is a method to reduce film shedding from components internal to a process chamber. In one example, the method includes forming a dielectric film layer on each of a successive plurality of substrates within the process chamber, and, after a pre-determined number of the successive plu...