ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,992, issued on Dec. 2, was assigned to Lam Research Corp. (Fremont, Calif.).
"High aspect ratio dielectric etch with chlorine" was invented by Rui Takahashi (Fremont, Calif.), Yilun Li (Newark, Calif.), Eric A. Hudson (Berkeley, Calif.), Youn-Jin Oh (Danville, Calif.), Wonjae Lee (Fremont, Calif.), Leonid Belau (Pleasanton, Calif.) and Andrew Clark Serino (Oakland, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments herein relate to methods and apparatus for etching recessed features on a semiconductor substrate. The techniques described herein can be used to form high quality recessed features with a substantially vertical prof...