ALEXANDRIA, Va., April 15 -- United States Patent no. 12,601,976, issued on April 14, was assigned to Lam Research Corp. (Fremont, Calif.).
"All-in-one dry development for metal-containing photoresist" was invented by Da Li (Newark, Calif.), Ji Yeon Kim (Sunnyvale, Calif.), Younghee Lee (Pleasanton, Calif.), Hongxiang Zhao (San Jose, Calif.), Yisi Zhu (Fremont, Calif.), Samantha S.H. Tan (Newark, Calif.), Mengnan Zou (Santa Clara, Calif.), Zhiwei Sun (Pleasanton, Calif.) and Jun Xue (Fremont, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Process condition management facilitates the combination of dry development and post-development treatment into a single process chamber, eliminating the necessity f...