ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,540, issued on June 16, was assigned to L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude (Paris).
"Etching method using oxygen-containing hydrofluorocarbon" was invented by Tomo Hasegawa (Yokosuka, Japan), Vladislav Gamaleev (Yokosuka, Japan) and Nicolas Gosset (Yokosuka, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An etching method for forming an aperture by selectively etching one or more silicon-containing films in a substrate using a patterned mask layer deposited on top of the one or more silicon-containing films comprises: mounting the substrate in a processing chamber; introducing an etching ga...