US Patent Issued to L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude on Dec. 2 for "Processes for forming metal oxide thin films on electrode interphase control" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,104, issued on Dec. 2, was assigned to L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude (Paris).

"Processes for forming metal oxide thin films on electrode interphase control" was invented by Christian Dussarrat (Tokyo), Sanghoon Kim (Yokohama, Japan) and Sunao Kamimura (Yokosuka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "This invention provides a novel solution to form an artificial interphase on the electrode to protect it from fast declining electrochemical behaviors, by depositing Metal Oxides Layer, by ALD or CVD. Metals discussed here are IVA-VIA elements (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W). The...