US Patent Issued to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, TOYOTA TSUSHO on July 21 for "SiC substrate, SiC substrate production method, SiC semiconductor device, and SiC semiconductor device production method" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,686,945, issued on July 21, was assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION (Hyogo, Japan) and TOYOTA TSUSHO Corp. (Nagoya, Japan).

"SiC substrate, SiC substrate production method, SiC semiconductor device, and SiC semiconductor device production method" was invented by Tadaaki Kaneko (Sanda, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention addresses the issue of providing: an SiC substrate having a dislocation conversion layer that can reduce resistance; and a novel technology pertaining to SiC semiconductors. This SiC substrate and SiC semiconductor device comprise a dislocation conversion layer 12 having a doping conce...