US Patent Issued to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, TOYO ALUMINIUM, TOYOTA TSUSHO on July 28 for "Method for producing aluminum nitride substrate, aluminum nitride substrate, and method for suppressing introduction of dislocation into aluminum nitride growth layer" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,619, issued on July 28, was assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION (Hyogo, Japan), TOYO ALUMINIUM K.K. (Osaka, Japan) and TOYOTA TSUSHO Corp. (Aichi, Japan).

"Method for producing aluminum nitride substrate, aluminum nitride substrate, and method for suppressing introduction of dislocation into aluminum nitride growth layer" was invented by Tadaaki Kaneko (Sanda, Japan), Daichi Dojima (Sanda, Japan), Taku Murakawa (Sanda, Japan), Moeko Matsubara (Osaka, Japan) and Yoshitaka Nishio (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A problem addressed by the present invention is to provide a novel technique with which is possible...