US Patent Issued to Korea Institute of Science and Technology on April 7 for "Method for area-selective growth of noble metal thin films using atomic layer deposition" (South Korean Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,595,554, issued on April 7, was assigned to Korea Institute of Science and Technology (Seoul, South Korea).

"Method for area-selective growth of noble metal thin films using atomic layer deposition" was invented by Han Kim (Seoul, South Korea), Ji-Soo Jang (Seoul, South Korea), Sunghoon Hur (Seoul, South Korea), Hyun-Cheol Song (Seoul, South Korea), Seung Hyub Baek (Seoul, South Korea), Ji-Won Choi (Seoul, South Korea), Jin Sang Kim (Wanju-gun, South Korea), Chong Yun Kang (Seoul, South Korea) and Seong Keun Kim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The method for area-selective growth of a noble metal thin film using atomic...