US Patent Issued to KOREA ELECTROTECHNOLOGY RESEARCH INSTITUTE on Sept. 9 for "Trench-gate sic mosfet device and manufacturing method therefor" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,350, issued on Sept. 9, was assigned to KOREA ELECTROTECHNOLOGY RESEARCH INSTITUTE (Changwon-si, South Korea).

"Trench-gate sic mosfet device and manufacturing method therefor" was invented by Jeong Hyun Moon (Gimhae-si, South Korea), In-Ho Kang (Jinju-si, South Korea), Sang Cheol Kim (Changwon-si, South Korea), Hyoung Woo Kim (Changwon-si, South Korea), Moonkyong Na (Changwon-si, South Korea), Wook Bahng (Changwon-si, South Korea) and Ogyun Seok (Busan, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a trench-gate SiC MOSFET device and a manufacturing method therefor. The trench-gate SiC MOSFET device of...