US Patent Issued to Korea Adanced Institute of Science and Technology on June 23 for "3-dimensional memristor element and method for manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,882, issued on June 23, was assigned to Korea Adanced Institute of Science and Technology (Daejeon, South Korea).

"3-dimensional memristor element and method for manufacturing the same" was invented by Seokwoo Jeon (Daejeon, South Korea), Gwangmin Bae (Daejeon, South Korea) and Gunho Chang (Daejeon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D memristor element includes a 3D nano-composite including a resistance-varying part, a first conductor and a second conductor, a first terminal electrically connected to the first conductor, and a second terminal electrically connected to the second conductor. The resistance-varying part incl...