ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,753,512, issued on Oct. 6, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo).
"Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus" was invented by Kimihiko Nakatani (Toyama, Japan) and Takayuki Waseda (Toyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes: (a) arranging a plurality of first substrates, each including a surface on which a concave structure is formed, in multiple stages within a first region along a direction perpendicular to the surface; (b) supplying a first processing gas toward at least a portion of the first ...