ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,461,507, issued on Nov. 4, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo).

"Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method, and control program" was invented by Masashi Sugishita (Toyama, Japan), Yuuji Urano (Toyama, Japan), Kiyohiko Maeda (Toyama, Japan), Masaaki Ueno (Toyama, Japan), Tetsuya Kosugi (Toyama, Japan) and Masaya Nishida (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a substrate processing apparatus, a substrate processing method, a semiconductor device manufacturing method, and a control program capable of controlling thickness uniformity...