US Patent Issued to Kokusai Electric on March 17 for "Substrate processing method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" (Japanese Inventor)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,882, issued on March 17, was assigned to Kokusai Electric Corp. (Tokyo).

"Substrate processing method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" was invented by Naofumi Ohashi (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes forming a modified film by supplying a modifying gas to modify an unmasked deposited film on a substrate; and removing the modified film, including supplying a removal gas activated by plasma and supplying a protective-film-forming gas at least at the same time."

The patent was filed on Aug. 29, 2022, under Applic...