US Patent Issued to Kokusai Electric on July 7 for "Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" (Japanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,612, issued on July 7, was assigned to Kokusai Electric Corp. (Tokyo).

"Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" was invented by Atsushi Sano (Toyama, Japan), Kenji Kameda (Toyama, Japan) and Yushin Takasawa (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique which includes: forming a first film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a first cycle a predetermined number of times, the first cycle including forming a first layer containing silicon, oxygen, carbon and nitrogen by supplyi...