ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,559,843, issued on Feb. 24, was assigned to Kokusai Electric Corp. (Tokyo).
"Substrate processing apparatus, method of manufacturing semiconductor device, method of processing substrate, and recording medium for suppressing overheating of a pipe heater" was invented by Satoshi Nakashima (Toyama, Japan) and Koji Shibuya (Toyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique including: at least one pipe heater configured to heat at least one gas pipe configured to supply a gas to a process chamber in which a substrate is processed; at least one temperature detector configured to detect a temperature of the at least one...