ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,555,752, issued on Feb. 17, was assigned to Kokusai Electric Corp. (Tokyo).

"Substrate processing apparatus, electrode structure and method of manufacturing semiconductor device" was invented by Tsuyoshi Takeda (Toyama, Japan), Daisuke Hara (Toyama, Japan), Hiroshi Nakajo (Toyama, Japan) and Iichiro Tsuchikura (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to the present disclosure, there is provided a technique capable of performing a substrate processing more uniformly. According to one aspect thereof, there is provided an electrode structure capable of generating a plasma, including: a first electrode group constituted by: at...