US Patent Issued to Kokusai Electric on Feb. 17 for "Method of forming film, method of manufacturing semiconductor device, film formation apparatus, and recording medium" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,553,126, issued on Feb. 17, was assigned to Kokusai Electric Corp. (Tokyo).

"Method of forming film, method of manufacturing semiconductor device, film formation apparatus, and recording medium" was invented by Yuki Taira (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes: forming a nitride film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor to the substrate; (b) supplying a nitriding agent to the substrate; and (c) supplying an active species X, which is generated by plasma-exciting an inert gas, to the substrate, wherein a stres...