ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,709,799, issued on Aug. 18, was assigned to Kokusai Electric Corp. (Tokyo).
"Substrate processing apparatus, method of processing substrate, method of manufacturing semiconductor device, recording medium, and exhaust system" was invented by Masaya Nishida (Toyama, Japan), Tomohiko Kadosaki (Toyama, Japan), Fumie Ando (Toyama, Japan), Kenichi Maeda (Toyama, Japan), Yosuke Kuwata (Toyama, Japan) and Fumikazu Takeuchi (Toyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes: a first gas supply line configured to supply a first gas to a substrate in a process chamber; a first exhaust line connected to a first...