ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,836, issued on May 26, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo) and NATIONAL INSITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Tokyo).

"Semiconductor device" was invented by Masahiro Takahashi (Toyama, Japan), Hideki Horita (Toyama, Japan) and Tatsurou Maeda (Tsukuba, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, including an insulating film provided on a substrate, a chlorine-containing semiconductor layer provided adjacent to the insulating film, and a semiconductor region provided adjacent to the chlorine-containing semiconductor layer, wherein a chlorine concentration in the chlorine-containing semicondu...