ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,553, issued on July 28, was assigned to KLA Corp. (Milpitas, Calif.).

"Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer" was invented by Abbas Haddadi (San Jose, Calif.), Sisir Yalamanchili (Milpitas, Calif.), John Fielden (Los Altos, Calif.) and Yung-Ho Alex Chuang (Cupertino, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An image sensor is fabricated by first heavily p-type doping the thin top monocrystalline silicon substrate of an SOI wafer, then forming a relatively lightly p-doped epitaxial layer on a top surface of the top silicon substrate, where p-type doping levels during these two p...