US Patent Issued to KITZ SCT, Tokyo Electron on April 14 for "Gate valve, substrate processing apparatus, and substrate processing method" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,601,044, issued on April 14, was assigned to KITZ SCT Corp. (Tokyo) and Tokyo Electron Ltd. (Tokyo).

"Gate valve, substrate processing apparatus, and substrate processing method" was invented by Yoshifumi Hoshino (Gunma, Japan), Kaito Suzuki (Gunma, Japan) and Yukio Ohizumi (Iwate, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gate valve, a substrate processing apparatus, and a substrate processing method which can improve the airtightness and cleanliness of a vacuum processing chamber and a vacuum preliminary chamber. A gate valve has a face facing a vacuum processing chamber and a face facing a vacuum preliminary chamber, the faces abutting ...