US Patent Issued to Kioxia on Sept. 9 for "Nonvolatile semiconductor memory device and manufacturing method thereof" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,299, issued on Sept. 9, was assigned to Kioxia Corp. (Tokyo).

"Nonvolatile semiconductor memory device and manufacturing method thereof" was invented by Masaru Kito (Yokohama, Japan), Hideaki Aochi (Kawasaki, Japan), Ryota Katsumata (Yokohama, Japan), Akihiro Nitayama (Yokohama, Japan), Masaru Kidoh (Kawasaki, Japan), Hiroyasu Tanaka (Tokyo), Yoshiaki Fukuzumi (Yokohama, Japan), Yasuyuki Matsuoka (Yokohama, Japan) and Mitsuru Sato (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that th...