US Patent Issued to KIOXIA on Sept. 2 for "Substrate processing apparatus and method of producing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,842, issued on Sept. 2, was assigned to KIOXIA Corp. (Tokyo).

"Substrate processing apparatus and method of producing semiconductor device" was invented by Yuya Matsubara (Yokkaichi Mie, Japan), Masayuki Kitamura (Yokkaichi Mie, Japan) and Atsuko Sakata (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing apparatus includes a chamber to accommodate a substrate. The apparatus includes a stage to support the substrate in the chamber. The apparatus includes an electrode disposed above the stage and containing aluminum. The electrode generates plasma from gas supplied into the chamber to form a first film on the su...