US Patent Issued to KIOXIA on Oct. 27 for "Semiconductor device and method for manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,651, issued on Oct. 27, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor device and method for manufacturing the same" was invented by Chihiro Umeda (Yokkaichi Mie, Japan), Yuta Kamiya (Nagoya Aichi, Japan), Tomohisa Iino (Yokkaichi Mie, Japan), Masaki Noguchi (Yokkaichi Mie, Japan), Akira Takashima (Fuchu Tokyo, Japan) and Yusuke Nakajima (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes electrode layers and first insulating films alternately stacked on top of one another; a second insulating film extending along an upper surface, a lower surface, and a side surface of one of electrode layers; ...