US Patent Issued to Kioxia on Oct. 20 for "Nonvolatile semiconductor memory device and method for controlling nonvolatile semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,695, issued on Oct. 20, was assigned to Kioxia Corp. (Tokyo).

"Nonvolatile semiconductor memory device and method for controlling nonvolatile semiconductor memory device" was invented by Viktoria Diana Schlykow (Kamakura, Japan) and Reika Tanaka (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device of embodiments includes a semiconductor layer, a gate electrode layer, memory cells each including a gate insulating layer containing Si, O, and N, and a control circuit. The control circuit performs a write operation and an erase operation on the memory cells. The control circuit determine whether or not the number...