US Patent Issued to Kioxia on Oct. 14 for "Memory device with memory array connected to circuits in different stacked substrates" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,448, issued on Oct. 14, was assigned to Kioxia Corp. (Tokyo).

"Memory device with memory array connected to circuits in different stacked substrates" was invented by Tsuneo Uenaka (Yokkaichi Mie, Japan), Tomoya Inden (Yokkaichi Mie, Japan) and Shigehiro Yamakita (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a memory device includes a first silicon substrate, a second silicon substrate, and a memory cell array. A first CMOS circuit is formed on the first silicon substrate. The second silicon substrate is provided above the first silicon substrate in a stacking direction. A second CMOS circuit is for...