US Patent Issued to Kioxia on May 5 for "Semiconductor memory device with operation-specific pass voltages" (Japanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,620,443, issued on May 5, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device with operation-specific pass voltages" was invented by Yasuhiro Shiino (Fujisawa Kanagawa, Japan) and Kenrou Kikuchi (Fujisawa Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor memory device includes a first memory sub-block and a second memory sub-block arranged in a first direction and a control circuit. The first memory sub-block includes a first memory cell and a first word line connected to the first memory cell. The second memory sub-block includes a second memory cell and a second word line connected...