ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,157, issued on May 5, was assigned to Kioxia Corp. (Tokyo).

"Film forming apparatus, and method of manufacturing semiconductor device" was invented by Kazuhiro Katono (Yokkaichi Mie, Japan), Kazuhiro Matsuo (Kuwana Mie, Japan), Yusuke Miki (Yokkaichi Mie, Japan), Kenichiro Toratani (Yokkaichi Mie, Japan) and Akifumi Gawase (Kuwana Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one embodiment, a film forming apparatus includes a chamber configured to load a substrate, a stage configured to support the substrate, and a gas supplier configured to supply a gas into the chamber to form a film on the substrate. The device further includes a fi...