US Patent Issued to Kioxia on May 12 for "Semiconductor memory device with voltage-controlled data latch node" (Japanese Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,626,735, issued on May 12, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device with voltage-controlled data latch node" was invented by Koji Tabata (Fujisawa Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a sense amplifier provided between a memory cell array and an input/output circuit. The sense amplifier has a data latch circuit operating at a first operating voltage and having first and second nodes, a multiplexer operating at a second operating voltage, and a sense amplifier unit. The first node is connected to the multiplexer and latches a first voltage supplied from the multiple...