ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,329, issued on May 12, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device" was invented by Naomi Ito (Shinagawa, Japan) and Koichi Kishi (Fujisawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate including a first region and a second region arranged in a first direction, and first electrodes arranged in a second direction. The first electrodes each include a pair of first parts disposed in the first region and arranged in a third direction, and a second part disposed in the second region and electrically connected to the first parts. The device includes first wirings arranged alo...