US Patent Issued to Kioxia on May 12 for "Memory device and method of manufacturing memory device" (Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,332, issued on May 12, was assigned to Kioxia Corp. (Tokyo).

"Memory device and method of manufacturing memory device" was invented by Mutsumi Okajima (Yokkaichi Mie, Japan), Tsuneo Inaba (Kamakura Kanagawa, Japan) and Hiromitsu Mashita (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a memory includes: a first transistor including: a first semiconductor between the substrate and the bit line; and a first gate facing a side of the first semiconductor; a first memory element between the first transistor and the substrate; a first word line including a first conductor coupled to the first gate; a second transistor incl...