ALEXANDRIA, Va., May 12 -- United States Patent no. 12,626,744, issued on May 12, was assigned to Kioxia Corp. (Tokyo).
"Magnetic memory device" was invented by Kuniaki Sugiura (Seoul, South Korea), Yosuke Kobayashi (Seoul, South Korea), Naoki Matsushita (Seoul, South Korea) and Masayoshi Iwayama (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device according to an embodiment includes a magnetic memory device includes first and second interconnect, a memory cell, a transistor, first and second sense amplifiers, and a control circuit. The memory cell includes a magnetoresistive effect element and a selector element. The magnetoresistive effect element and the selector ele...