US Patent Issued to Kioxia on March 3 for "Three dimensional semiconductor memory device with a plurality of tunnel insulating layers in protruding parts" (Japanese Inventor)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,627, issued on March 3, was assigned to Kioxia Corp. (Tokyo).

"Three dimensional semiconductor memory device with a plurality of tunnel insulating layers in protruding parts" was invented by Takuya Nishikawa (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor storage device includes a stacked body with conductive layers which are spaced apart one from another along a first direction. A pillar structure extends in the first direction through the conductive layers and has protruding parts, each of which protrudes outwardly from the pillar structure towards a conductive layer. The pillar str...