US Patent Issued to Kioxia on March 3 for "Memory device having a first layer disposed between a memory element and a switching element thereof" (South Korean, Japanese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,769, issued on March 3, was assigned to Kioxia Corp. (Tokyo).

"Memory device having a first layer disposed between a memory element and a switching element thereof" was invented by Kazuhiro Tomioka (Yokohama Kanagawa, Japan) and Kazuya Sawada (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a memory device includes a memory element provided above a substrate in a first direction perpendicular to a first surface of the substrate; a switching element provided between the substrate and the memory element; and a first layer provided between the memory element and the switching element. The first layer inclu...