ALEXANDRIA, Va., March 24 -- United States Patent no. 12,586,649, issued on March 24, was assigned to KIOXIA Corp. (Tokyo).

"Storage device with word lines applied with respective voltage levels during different time periods" was invented by Hiroaki Kosako (Yokkaichi Mie, Japan), Kota Nishikawa (Zama Kanagawa, Japan) and Kenrou Kikuchi (Fujisawa Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first select transistor is connected to a first wiring. A first memory cell transistor and a second memory cell transistor are connected in series between the first select transistor and a second select transistor. A first word line is connected to the first memory cell transistor. A second word line is...