US Patent Issued to Kioxia on March 24 for "Semiconductor memory device" (Japanese Inventor)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,210, issued on March 24, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device" was invented by Hiroshi Kanno (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor memory device includes a first wiring layer above a first semiconductor layer in a first direction and a second wiring layer above the first semiconductor layer and spaced from the first wiring layer in a second direction. A first memory pillar extends through the first wiring layer. A second memory pillar extends through the second wiring layer. A member is between the first and second wiring layers in the second d...