ALEXANDRIA, Va., March 17 -- United States Patent no. 12,580,020, issued on March 17, was assigned to KIOXIA Corp. (Tokyo).
"Semiconductor memory device" was invented by Takeshi Sakaguchi (Yokkaichi Mie, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a first semiconductor layer, a first gate electrode layer, a second gate electrode layer including a first region and a second region that is separated from the first region, the first semiconductor layer being provided between the first region and the second region, a third gate electrode layer that is provided between the first gate electrode layer and the second gate electrode layer, and includes a third region and...